d u a l n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 9 9 4 8 j f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l m o s f e t 6 0 v / 4 a , r d s ( o n ) = 6 0 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 7 2 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a r e a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f d i p - 8 power management in dc/dc converter, dc/ac inverter systems. g1 s1 d1 d1 (8) (7) (2) (1) g2 s2 d2 d2 (6) (5) (4) (3) n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . s1 g1 s2 g2 d1 d1 d2 d2 apm9948 handling code temp. range package code package code j : dip-8 operating junction temp. range c : -55 to 150 c handling code tu : tube assembly material l : lead free device g : halogen and lead free device apm9948 j : apm9948 xxxxx xxxxx - date code assembly material
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 9 9 4 8 j a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage 60 v gss gate - source voltage 20 v i d * continuous drain current 4 i dm * 300 m s pulsed drain current v gs =10v 16 a i s * diode continuous forward current 2.5 a t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 2.5 p d * maximum power dissipation t a =100 c 1 w r q ja * thermal resistance - junction to ambient 50 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm9948 j symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 60 v v ds = 48 v, v gs =0v 1 i dss zero gate voltage drain current t a =25 c 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 1 1.9 3 v i gss gate leakage current v gs = 16 v, v ds =0v 10 m a v gs = 10 v, i ds = 4 a 60 85 r ds(on) a drain - source on - state resistance v gs = 4.5 v, i ds = 3 a 72 100 m w diode characteristics v sd a diode forward voltage i sd = 2.5 a, v gs =0 v 0.8 1.1 v t rr reverse recovery time 28 ns q rr reverse recovery charge i s d = 4a, dl s d /dt = 100a/ m s 28 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 9 9 4 8 j e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm9948j unit symbol parameter test condition min. typ. max. dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 4.3 w c iss input capacitance 610 c oss output capacitance 47 c rss reverse t ransfer capacitance v gs =0v, v ds =30v, f requency =1.0mhz 30 pf t d(on) turn - on delay time 7 14 t r turn - on rise time 6 12 t d(off) turn - off delay time 26 48 t f turn - off fall time v dd = 30 v, r l = 30 w , i d s = 1 a, v gen = 10v , r g = 6 w 4 8 ns gate charge characteristics b q g total gate charge 14.2 20 q gs gate - source charge 1.9 q gd gate - drain charge v ds = 30 v, v gs = 10 v, i d s = 4 a 3.2 nc notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 9 9 4 8 j t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 t a =25 o c,v g =10v 0.01 0.1 1 10 100 300 0.01 0.1 1 10 50 300 m s rds(on) limit 1s t a =25 o c 10ms 100ms dc 1ms 1e-4 1e-3 0.01 0.1 1 10 30 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 9 9 4 8 j r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 3.5v 3v v gs = 4,4.5,5,6,7,8,9,10v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 m a 0 2 4 6 8 10 12 14 16 40 45 50 55 60 65 70 75 80 85 90 95 100 v gs =4.5v v gs =10v 2 3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90 i d =4a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 9 9 4 8 j v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 0 3 6 9 12 15 0 1 2 3 4 5 6 7 8 9 10 v ds =30v i ds = 4a 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 900 1000 frequency=1mhz crss coss ciss -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 60m w v gs = 10v i ds = 4a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 9 9 4 8 j p a c k a g e i n f o r m a t i o n d i p - 8 e 1 d a 2 a 1 a l d1 ea eb e e 0 . 3 8 c b b2 s y m b o l min. max. 5.33 0.38 0.36 0.56 1.14 1.78 0.20 0.35 9.01 10.16 0.13 2.92 3.81 a a1 b b2 c d d1 e e1 e ea millimeters a2 2.92 4.95 2.54 bsc dip-8 7.62 8.26 6.10 7.11 eb l 10.92 7.62 bsc min. max. inches 0.210 0.015 0.100 bsc 0.300 bsc 0.115 0.195 0.014 0.022 0.045 0.070 0.008 0.014 0.355 0.400 0.005 0.300 0.325 0.240 0.280 0.430 0.115 0.150
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 9 9 4 8 j test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. r e l i a b i l i t y t e s t p r o g r a m t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a r . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 9 9 4 8 j table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838
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